Ion sensitive field effect transistor modelling for multidomain simulation purposes

The proper design and simulation of modern electronic microsystems oriented towards environment monitoring requires accurate models of various ambient sensors. In particular, this paper presents a comprehensive model of an ion sensitive field effect transistor (ISFET). The model can be employed straightforwardly for simulations at device, circuit or system level. First, the model was validated with electrical measurements and simulations of real structures performed for different ion concentration and temperature values. Then, the ISFET sensor model was employed for mixed-signal simulations in VHDL-AMS, when the analysis of a microsystem consisting of the ISFET sensor and a sigma–delta analogue-to-digital converter was carried out. Additionally, the presence of other ions than hydrogen in the measured solution was also taken into account in the simulations. q 2004 Elsevier Ltd. All rights reserved.